美光公布未来十年存储技术路线图
美光公布多年期存储路线图，涵盖1δ DRAM、DDR6、LPDDR6、垂直HBM、vEIM、3D DRAM和G11 NAND。公司计划在1ε引入晶圆键合、在后续世代采用High-NA EUV，并让超过400层的G11 NAND于2027年下半年爬坡。美光宣称DDR6带宽将超过DDR5两倍、LPDDR6能效提升35%，但现有报道没有独立验证。
该路线图直接关系AI基础设施，因为它同时推进高带宽存储、处理器级集成和更高密度NAND，也显示美光选择了不同于竞争对手的4F² DRAM扩展路线。
Having jettisoned 4F2 memory cells from its roadmap, Micron must use different methods to continue scaling its DRAM devices in the coming years to keep up with rivals planning to use smaller DRAM transistors towards the end of the decade. Instead, Micron intends to introduce wafer bonding with its upcoming 1ε DRAM process technology and adopt High-NA EUV lithography for subsequent generations. Meanwhile, the company is developing new types of memory, including vertical high-bandwidth memory (vHBM) and vertical edge inference memory (vEIM), which will be integrated directly on top of processors.
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