Micron G11 NAND

Headlines · 1

1. Oct 21
   Micron Maps a New Decade of DRAM, HBM and NAND

   Micron presented a multi-year memory roadmap spanning 1δ DRAM, DDR6, LPDDR6, vertical HBM, vEIM, 3D DRAM and G11 NAND. The company plans to introduce wafer bonding with 1ε, High-NA EUV in later generations, and more than 400 layers for G11 NAND, whose production ramp is targeted for the second half of 2027. Micron claims DDR6 will deliver more than twice DDR5 bandwidth and LPDDR6 will improve power efficiency by 35%, but the supplied reports contain no independent validation.

   Tom’s Hardware · 🔥 0

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