High-NA EUV

Headlines · 2

1. 22h
   Lam Research and imec Expand 3D Integration and Aether Collaboration

   Lam Research and imec expanded their collaboration with joint research on advanced 3D integration, next-generation 3D memory processes, and Aether dry resist for High-NA EUV lithography, according to TechNews. The 3D integration work covers dielectric deposition, stress compensation, bevel deposition, plasma dicing, and process validation, while the memory effort includes charge-trapping materials, multilayer deposition, high-aspect-ratio etching, contacts, and low-resistance interconnects. Lam Research said earlier joint work used single-exposure High-NA EUV lithography to pattern ruthenium direct-metal-etch interconnects at line pitches below 20 nanometers, with reported electrical yields of 100% for fork structures and above 90% for meander structures.

   科技新报 · 🔥 6
2. Oct 21
   Intel advances Fab 62 and Ohio One construction

   Intel has begun installing production tools at Fab 62 in Arizona and reported construction progress at the Ohio One complex in New Albany. Intel also confirmed integrating High-NA EUV lithography into high-volume manufacturing, while later reporting said it is shifting some capacity from client processors toward data-center CPUs amid AI-related demand. Fab 62’s operating and mass-production schedules differ across reports, and its process-node assignment has not been formally disclosed.

   Tom’s Hardware · 🔥 6

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