Micron vHBM

Headlines · 2

1. 5d
   Nagare Labs advances Z2RAM memory-on-compute prototype

   Nagare Labs says its Z2RAM could place SRAM-speed memory with DRAM-like density directly on AI accelerators, addressing bandwidth and heat constraints that make stacked HBM difficult. Founder papers report a three-transistor cell retaining data for more than 300 seconds at 85°C, while Gen 1 targets such as 5× SRAM density and 14× DRAM speed remain vendor projections. The technology remains a lab prototype without a fabrication facility, and no published cell has demonstrated retention above 95°C.

   Tom’s Hardware · 🔥 0
2. Oct 21
   Micron Maps a New Decade of DRAM, HBM and NAND

   Micron presented a multi-year memory roadmap spanning 1δ DRAM, DDR6, LPDDR6, vertical HBM, vEIM, 3D DRAM and G11 NAND. The company plans to introduce wafer bonding with 1ε, High-NA EUV in later generations, and more than 400 layers for G11 NAND, whose production ramp is targeted for the second half of 2027. Micron claims DDR6 will deliver more than twice DDR5 bandwidth and LPDDR6 will improve power efficiency by 35%, but the supplied reports contain no independent validation.

   Tom’s Hardware · 🔥 0

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