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Samsung said to plan 2nm M2800 5G modem, freeing 4nm capacity for HBM base dies

AI summary

TechNews, citing THEELEC and industry sources, reports that Samsung's System LSI Business has decided to build its next external 5G modem, M2800, on a 2nm process; the chip is slated for completion in 2027 and is expected to pair with Exynos 2800 in a dual-chip setup in the 2028 Galaxy S28 series. The report says the move frees 4nm capacity that Samsung Foundry is redirecting toward HBM base dies, the logic-bearing layer at the bottom of an HBM stack, while the M2700 modem for the 2027 Galaxy S27 stays at 4nm and the old Shannon brand has been retired in favor of M-series naming. cnBeta's analysis adds that Samsung is validating its own 2nm process for Nvidia custom NVHBM base dies, which suppliers have reportedly been asked to build on TSMC 3nm, and says there is no evidence Qualcomm has decided to place flagship Snapdragon orders on Samsung 2nm. TechNews also cites Samsung MX internal tests praising the 4nm M2700's efficiency and data speeds over the Shannon 5410, a vendor claim.

In-depth insight

The reported reallocation links AI-driven HBM demand to advanced-node capacity planning, with cnBeta noting base dies affect HBM performance and that 4nm capacity allocation is becoming a factor in Samsung's advanced memory expansion.

三星新一代 M2800 基頻晶片將以 2 奈米打造,空下 4 奈米以生產 HBM 基礎晶片

韓媒報導,三星電子(Samsung Electronics)正在針對旗下行動基頻晶片的製程技術與晶圓代工產能進行重組。業界消息指出,三星系統LSI部門(System LSI Business)決議將下一代外掛式 5G 基頻晶片採行 2 奈米製程,並將原有的4奈米產能大幅轉向高頻寬記憶體(HBM)基礎晶片的生產。

根據THEELEC的報導,三星決定將預計於2027年完成開發的次世代外掛式5G基頻晶片「M2800」推進至2奈米先進製程,這代表著基頻晶片將從目前採用的4奈米技術,跨世代轉型到更先進的製程。M2800預計應用於2028年上市的Galaxy S28系列手機上,並與Exynos 2800處理器以雙晶片架構搭配運作。

#Samsung Electronics#Samsung System LSI#Samsung Foundry#M2800#Exynos 2800#M2700#HBM#NVHBM#Nvidia#Qualcomm#TSMC

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