NVHBM

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   Nvidia asks Samsung, SK Hynix and Micron to build NVHBM base dies on TSMC 3nm

   Nvidia has asked its three NVHBM suppliers — Samsung Electronics, SK Hynix and Micron — to make the base die of its custom high-bandwidth memory on TSMC's 3-nanometer process, with memory dies standardized on the sixth-generation 1c DRAM node, according to the Seoul Economic Daily. Samsung's Device Solutions division agreed after an internal review, the report said, which would be the first time Samsung has worked with TSMC on HBM and a break from its turnkey model of making both core and base dies itself. Samsung will keep turnkey production for standard HBM4/HBM4E and custom HBM for other customers, is evaluating making NVHBM base dies at its own foundry as a hedge against TSMC capacity limits, and told reporters it does not comment on matters involving customers.

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