Pat Gelsinger Backs Nagare Labs’ Z2RAM Research
Former Intel CEO Pat Gelsinger is supporting Nagare Labs and its Z2RAM memory technology, according to TechNews and Wccftech. The laboratory-stage technology is designed to combine SRAM-like speed, DRAM-like density and Flash-like scalability. Z2RAM uses an oxide semiconductor and a two-transistor cell, and Nagare Labs is researching vertical stacking and direct integration with logic chips through 3D hybrid bonding. The company says its first generation could provide more than five times the bit density of SRAM, with comparable bandwidth. Nagare Labs has raised a $5 million seed round and is seeking research and manufacturing partners. The technology remains a laboratory prototype, and no standards yet exist for integrating this type of memory with accelerators.
AI workloads are memory-limited, and Z2RAM is aimed at addressing memory bandwidth and capacity constraints. Its practical significance remains uncertain because the technology is still a laboratory prototype and integration standards have not been established.
英特爾（Intel）前執行長季辛格（Pat Gelsinger）看好新創公司 Nagare Labs 的 Z2RAM 記憶體技術，認為它有機會打破半導體產業長期以來的「記憶體牆」。他指出，過去 30 年來，廣泛部署的記憶體類型幾乎只有 SRAM、DRAM 與 Flash，而 Z2RAM 目標是把三者的優點結合在一起，朝向「接近 SRAM 的速度、接近 DRAM 的密度，以及類似 Flash 的可擴充性」前進。
Nagare Labs 由喬治亞理工學院教授蘇曼·達塔（Suman Datta，首圖右）與 Shimeng Yu（首圖左）創立，技術核心是以氧化物半導體打造記憶體，並透過 3D 混合鍵合直接整合到運算邏輯上。公司表示，Z2RAM 的首代版本位元密度可望達到 SRAM 的 5 倍以上；若以 64MB 的 SRAM 晶片區塊為例，同樣空間內的 Z2RAM 可放入約 320MB，且頻寬可望相近。
#Nagare Labs#Z2RAM#Pat Gelsinger#Intel#Playground Global#Suman Datta#Shimeng Yu#Georgia Institute of Technology#SRAM#DRAM#HBM#NAND Flash