MemSilicon tapes out MountTai 2026, a 1Gb RRAM chip
MemSilicon said on October 12 that it completed tape-out of MountTai 2026, its first high-density, large-capacity RRAM chip built on a 1TnR cell approach, and is now moving to verification. The chip uses a 28nm CMOS platform and a 1T4R structure — one select transistor shared by four resistive memory cells — with 1Gb per die, a density of 30Mb/mm², access latency under 20ns and on-chip hardware error correction. MemSilicon says the device balances large capacity, high density and fast reads, and is pursuing three product lines: embedded RRAM IP, high-density large-capacity RRAM, and hybrid compute-in-memory combining RRAM with DRAM.
If verification holds up, dense on-chip non-volatile memory could ease the memory-wall and KV cache capacity pressure on AI inference chips, though production and customer adoption remain unproven.