SanDisk

Headlines · 2

1. 4d
   Goldman Sachs: high-bandwidth flash could break AI memory wall, up to $150B market

   In a research note dated Oct. 12, Goldman Sachs said fast-growing AI inference demand is making insufficient memory capacity a bottleneck on compute efficiency, and that new NAND technologies such as high-bandwidth flash (HBF) could ease this "memory wall" and notably cut AI infrastructure costs. The bank estimates a potential HBF market of $40 billion to $150 billion, assuming GPU adoption rates of 15% to 50%. Goldman flagged SanDisk and SK Hynix as HBF technology leaders, keeping "buy" ratings on both, said Samsung Electronics should also benefit, and kept a "neutral" rating on Micron, whose business is weighted toward DRAM and HBM with less direct exposure.

   36氪快讯 · 🔥 0
2. 5d
   Samsung develops zNAND-T and zNAND-I flash for AI workloads

   Korean outlet ZDNET Korea reports that Samsung Electronics is developing two NAND flash products tuned for AI workloads, zNAND-T and zNAND-I. zNAND-T stands for throughput, using TSV-stacked NAND dies to optimize read/write bandwidth for data-center AI silicon, an approach the report likens to the HBF concept proposed by SanDisk and SK hynix; zNAND-I refers to IOPS and targets random performance in scenarios with frequent small reads and writes, such as KV cache offloading. Separately, Samsung announced a next-generation memory and storage technology strategy for AI infrastructure spanning high-performance memory, Compute Express Link (CXL)-based storage expansion, and new-generation SSD data storage and management. Together with the previously disclosed zNAND-O, the three zNAND variants are positioned for different workloads, which the report frames as a shift from general-purpose NAND toward customization.

   IT之家 AI · 🔥 0

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