HBM4E

Headlines · 5

1. 1d
   Nvidia asks Samsung, SK Hynix and Micron to build NVHBM base dies on TSMC 3nm

   Nvidia has asked its three NVHBM suppliers — Samsung Electronics, SK Hynix and Micron — to make the base die of its custom high-bandwidth memory on TSMC's 3-nanometer process, with memory dies standardized on the sixth-generation 1c DRAM node, according to the Seoul Economic Daily. Samsung's Device Solutions division agreed after an internal review, the report said, which would be the first time Samsung has worked with TSMC on HBM and a break from its turnkey model of making both core and base dies itself. Samsung will keep turnkey production for standard HBM4/HBM4E and custom HBM for other customers, is evaluating making NVHBM base dies at its own foundry as a hedge against TSMC capacity limits, and told reporters it does not comment on matters involving customers.

   IT之家 AI · 🔥 53
2. 3d
   Morgan Stanley lifts Q4 DRAM, NAND contract price forecasts; compute still top AI pick

   A Morgan Stanley report raised its memory contract-price forecasts: Q4 2026 DRAM contract prices are now seen up 10–15% quarter over quarter (from +3–8%), with PC DRAM at +13–18% and server DRAM at +10–15%, while NAND moves to +15–20% from +0–5% and enterprise SSDs reach +23–28%. The bank forecasts 2027 HBM average selling prices up 121% year over year, with HBM4 at US$3–5 per Gb and HBM4e above US$5, but says Nvidia's Rubin ramp is behind schedule, with 2026 VR200 NVL72 rack shipments estimated below 10,000 units versus an original target of about 15,000. It keeps its AI supply-chain priority of compute first, networking second and selective memory allocation, and projects DRAM capex of US$98 billion in 2026 (+82%) rising to US$150–160 billion in 2027.

   科技新报 · 🔥 0
3. 3d
   Micron's AI-era rise: record FY2026 Q4, HBM gap and US fab buildout

   A Silicon Valley 101 article republished by TMTPost traces Micron from a dental-clinic basement in Boise, Idaho, to the only US company among the three big memory makers. It reports that on September 30 Micron posted record fiscal 2026 fourth-quarter revenue of $54.23 billion with an 80.7% operating margin, and full-year fiscal 2026 revenue of $133.2 billion, up 256% year over year, attributing the surge to AI-driven memory demand. The article says Micron remains the smallest of the three by revenue and capacity; citing SemiAnalysis estimates, it says Micron's HBM output is about one-third that of SK hynix and Samsung, and most production is still in Asia. It plans more than $250 billion of US investment through 2035 and about 40% of DRAM capacity in the US, though the first Boise phase is expected only around 2027. It also describes a public clash with Apple over rising memory prices and notes Micron is the only US company mass-producing advanced HBM.

   钛媒体 · 🔥 8
4. Oct 12
   HBM yield ceiling: TrendForce forecasts 2027 supply tightness, blended ASP up 121%

   TrendForce's latest research estimates memory supply will remain tight through 2027 and has revised up its HBM price outlook, projecting blended ASP to rise about 121% year over year, driven by tight overall supply, a higher share of pricier HBM4 shipments and the gradual ramp of HBM4e in the second half of 2027. The article argues that beyond advanced wafer capacity, stacking yield is the key constraint on effective supply: TrendForce data puts current HBM yield at only 50%-60%, with yields typically falling for each new generation, while JPMorgan data shows 58% of 2025-2028 DRAM capacity additions going to HBM, lifting HBM's share of total DRAM capacity from 19% to 31%. Micron has said it will work with TSMC on mass production of next-generation HBM4E in 2027, and per TrendForce, NVIDIA has been reassessing Rubin Ultra's HBM configuration since Q3 2026, weighing HBM4e 12hi/8hi against HBM4 12hi/8hi.

   虎嗅 AI · 🔥 0
5. Oct 12
   Korea chip show opens Oct 14 with HBM4E, physical AI chips in focus

   South Korea's semiconductor industry association said the 28th Korea Semiconductor Exhibition (SEDEX 2026) will run Oct 14-16 at COEX in Gangnam, Seoul, under the theme "Into the Era of Silicon Intelligence," with 300 companies and 888 booths, a record size. Samsung Electronics will show next-generation memory structures and products for cloud, edge computing and physical AI, including high bandwidth memory (HBM), mobile image sensors, mobile processors, high-reliability automotive chips, foundry solutions and 3D memory structures. SK Hynix will unveil next-generation memory technologies including seventh-generation HBM (HBM4E) and high bandwidth flash (HBF), alongside flagship server, PC and mobile DRAM, NAND flash and SSD products; Korean materials, parts and equipment makers such as Jusung Engineering, SEMES and Hanmi Semiconductor will also exhibit.

   36氪快讯 · 🔥 0

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