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- Lam Research and imec Expand 3D Integration and Aether Collaboration
Lam Research and imec expanded their collaboration with joint research on advanced 3D integration, next-generation 3D memory processes, and Aether dry resist for High-NA EUV lithography, according to TechNews. The 3D integration work covers dielectric deposition, stress compensation, bevel deposition, plasma dicing, and process validation, while the memory effort includes charge-trapping materials, multilayer deposition, high-aspect-ratio etching, contacts, and low-resistance interconnects. Lam Research said earlier joint work used single-exposure High-NA EUV lithography to pattern ruthenium direct-metal-etch interconnects at line pitches below 20 nanometers, with reported electrical yields of 100% for fork structures and above 90% for meander structures.
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