3D FeNAND

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1. 2d
   SK hynix unveils 3D FeNAND for analog compute-in-memory AI

   SK hynix has published research showing how ferroelectric 3D NAND (3D FeNAND) can perform analog compute-in-memory (A-CiM), with the work appearing in an IEEE paper. The approach stores data and controls current via the polarization state of ferroelectric material, allowing a single cell to produce multiple current states suited to AI weight data, and lets NAND carry out multiply-accumulate (MAC) operations inside the memory to cut data movement. Simulated results under die-size constraints show up to 20x higher throughput and up to 5,000x better energy efficiency than conventional 2D non-volatile memory arrays; the company also presented the technology at OCP Global Summit 2026, saying NAND could eventually support data center and AI workloads beyond storage.

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